| PART |
Description |
Maker |
| R5100410 R5100415 R5100315 R5100110 R5100115 R5100 |
150 A, 1200 V, SILICON, RECTIFIER DIODE, DO-8
General Purpose Rectifier (100-150 Amperes Average 1200 Volts) 通用整流器（100-150安培平均1200伏特
4 Pin, MFP, Phototransistor Detector, CTR 50 min @ 5mA, 5V Optocoupler 通用整流器（100-150安培平均1200伏特
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
Harwin PLC
|
| ADL5802 ADL5802-EVALZ ADL5802ACPZ-R7 ADL580209 |
Dual Channel, High IP3, 100 MHz to 6 GHz Active Mixer
Dual Channel High IP3 100 MHz – 6 GHz Active Mixer; No of Pins: 24 100 MHz - 6000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER
|
Analog Devices, Inc.
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP9150 FN2293 |
25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
25A, 100V, 0.150 Ohm, P-Channel Power MOSFET
From old datasheet system
|
HARRIS SEMICONDUCTOR
Intersil Corporation
Samsung semiconductor
|
| SUP28N15-52 |
N-Channel 150-V (D-S) 175C MOSFET
From old datasheet system
N-Channel MOSFET
N-Channel 150-V (D-S) 175 C MOSFET
|
VISAY[Vishay Siliconix]
|
| TC2014-1.8VCTTR TC201413 TC2014-3.3VCTTR TC2015-3. |
50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass
50 mA, 100 mA, 150 mA CMOS LDOs
|
Microchip Technology
|
| CLY35-10 CLY35 CLY35-00 CLY35-05 |
HiRel C-Band GaAs Power-MESFET
SCREWDRIVER SET, PRECISION 7 PCSCREWDRIVER SET, PRECISION 7 PC; Kit contents:Slot/Phillips: Slot 2.5 75, 3.0 100, 4.0 100, 4.0 150, PH 0 60, PH 1 80
SCREWDRIVER SET, PRECISION 4 PCSCREWDRIVER SET, PRECISION 4 PC; Kit contents:Slot/Philips: Slot 1.5 60, 2.5 75, 3.0 100, PH 0 60 伊雷尔C波段砷化镓功率场效应
SCREWDRIVER SET, ESDSCREWDRIVER SET, ESD; Kit contents:Slot/Phillips: Slot 2.5 75, 3.0 100, 4.0 100, 4.0 150, PH 0 60, PH 1 80 伊雷尔C波段砷化镓功率场效应
|
http://
INFINEON[Infineon Technologies AG]
|
| MRF275G MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| CM150TU-12H |
240 x 128 pixel format, CFL Backlight with power harness 150 A, 600 V, N-CHANNEL IGBT
Six IGBTMOD 150 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| PB271-24C-H PB271-24P-H PB271-24S-H PB271-12C-H PB |
100-150 WATTS DC/DC SINGLE OUTPUT RAILWAY
|
http://
Powerbox
|
| TC2186 TC2054_06 TC2055 |
50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output
|
MICROCHIP[Microchip Technology]
|
| 2SK1085-M |
N-channel MOS-FET 3 A, 150 V, 1.17 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
|
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